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| (R) BAR42FILM BAR43/A/C/SFILM SMALL SIGNAL SCHOTTKY DIODES K N.C. A A K1 K2 BAR42FILM BAR43FILM A1 K2 BAR43AFILM K DESCRIPTION General purpose metal to silicon diodes featuring very low turn-on voltage and fast switching. A2 K1 A1 A2 BAR43SFILM BAR43CFILM SOT-23 (Plastic) ABSOLUTE RATINGS (limiting values) Symbol VRRM IF IFSM Ptot Tstg Tj TL Parameter Repetitive peak reverse voltage Continuous forward current Surge non repetitive forward current Power dissipation (note 1) Maximum storage temperature range Maximum operating junction temperature * Maximum temperature for soldering during 10s tp=10ms sinusoidal Tamb = 25C Value 30 100 750 250 - 65 to +150 150 260 Unit V mA mA mW C C C Note 1: for double diodes, Ptot is the total power dissipation of both diodes. *: dPtot 1 < thermal runaway condition for a diode on its own heatsink dTj Rth( j - a ) THERMAL RESISTANCE Symbol Rth(j-a) Test conditions Junction-ambient * Value 500 Unit C/W * Mounted on epoxy board with recommended pad layout. August 2001- Ed: 2B 1/4 BAR42FILM BAR43/A/C/SFILM ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol VBR VF * Tj = 25C Tj = 25C Test Conditions IR = 100A BAR 42FILM BAR 43FILM All IR ** Tj = 25C Tj = 100C Pulse test: * tp = 380s, < 2% Min. 30 IF = 10 mA IF = 50 mA IF = 2 mA IF = 15 mA IF = 100 mA 0.26 Typ. 0.35 0.5 Max. 0.4 0.65 0.33 0.45 1 500 100 Unit V V VR = 25V nA A ** tp = 5 ms, <2% DYNAMIC CHARACTERISTICS Symbol C trr * Tj = 25C Tj = 25C Irr = 1mA Tj = 25C F = 45Mhz Test Conditions VR = 1V IF = 10 mA RL = 100 RL = 50 K Vi = 2V F = 1MHz IR = 10 mA CL = 300 pF for BAR 43 80 Min. Typ. 7 5 Max. Unit pF ns % * Detection effeciency Fig. 1-1: Forward voltage drop versus forward current (typical values, low level). IFM(A) 2.00E-2 1.80E-2 Tj=100C Fig. 1-2: Forward voltage drop versus forward current (typical values, high level). IFM(A) 5E-1 Tj=100C 1.60E-2 1.40E-2 Tj=25C 1E-1 Tj=50C 1.20E-2 1.00E-2 8.00E-3 6.00E-3 4.00E-3 Tj=50C 1E-2 Tj=25C 2.00E-3 VFM(V) 0.00E+0 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 VFM(V) 1E-3 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 2/4 BAR42FILM BAR43/A/C/SFILM Fig. 2: Reverse leakage current versus reverse voltage applied (typical values). IR(A) 1E+2 Tj=100C Fig. 3: Reverse leakage current versus junction temperature. IR(A) 1E+4 VR=30V 1E+3 1E+2 1E+1 1E+0 Tj=50C 1E+1 1E+0 1E-1 Tj=25C 1E-1 VR(V) 1E-2 0 5 10 15 20 25 30 1E-2 0 25 50 75 100 125 150 Tj(C) Fig. 4: Junction capacitance versus reverse voltage applied (typical values). C(pF) 10 F=1MHz Tj=25C Fig. 5: Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy FR4 with recommendedpad layout, e(Cu)=35m). Zth(j-a)/Rth(j-a) 1.00 = 0.5 5 = 0.2 0.10 = 0.1 2 Single pulse T VR(V) 1 1 2 5 10 20 30 0.01 1E-3 tp(s) 1E-2 1E-1 1E+0 =tp/T tp 1E+1 1E+2 Fig. 6: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35m). Rth(j-a) (C/W) 350 P=0.25W 300 250 200 S(Cu) (mm ) 150 0 5 10 15 20 25 30 35 40 45 50 3/4 BAR42FILM BAR43/A/C/SFILM PACKAGE MECHANICAL DATA SOT-23 (Plastic) E A REF. e B e1 D S A1 L H c A A1 B c D e e1 E H L S DIMENSIONS Millimeters Inches Min. Max. Min. Max. 0.89 1.4 0.035 0.055 0 0.1 0 0.004 0.3 0.51 0.012 0.02 0.085 0.18 0.003 0.007 2.75 3.04 0.108 0.12 0.85 1.05 0.033 0.041 1.7 2.1 0.067 0.083 1.2 1.6 0.047 0.063 2.1 2.75 0.083 0.108 0.6 typ. 0.024 typ. 0.35 0.65 0.014 0.026 FOOT PRINT DIMENSIONS 0.9 0.035 0.9 0.035 1.1 0.043 2.35 0.92 1.9 0.075 1.45 0.037 1.1 0.043 mm inch 0.9 0.035 Ordering type BAR42FILM BAR43FILM BAR43AFILM BAR43CFILM Marking D94 D95 DB1 DB2 Package SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 Weight 0.01g 0.01g 0.01g 0.01g 0.01g Base qty 3000 3000 3000 3000 3000 Delivery mode Tape & reel Tape & reel Tape & reel Tape & reel Tape & reel BAR43SFILM DA5 Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2001 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4 |
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